Semiconductor inspection device and method for manufacturing contact probe

ABSTRACT

A semiconductor inspection device for inspecting an electronic device is disclosed. The semiconductor inspection device includes a contact probe including a plurality of column parts disposed in continuation, each of the column parts having different height, a conductive layer formed at least on the surfaces of the column parts, a holding part for holding the contact probe, and a through-hole electrode penetrating at least one of the column parts, wherein the contact probe and the holding part are integrally formed from a single silicon substrate.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a semiconductor inspectiondevice and a method for manufacturing a contact probe, and moreparticularly, to a semiconductor inspection device including a contactprobe that is electrically connected to a terminal part of an electronicdevice when inspecting the electronic device and a method formanufacturing the contact probe.

2. Description of the Related Art

Along with high densification of semiconductor devices in recent years,external connection terminals for semiconductor devices are providedwith an increasingly large number of pins. At the same time, there isalso a demand for further size-reduction of semiconductor devices.Therefore, semiconductor devices are desired to have a highly densearrangement of external connection terminals. As a known package forsatisfying such desire, there is, for example, a BGA (Ball Grid Array)and a CSP (Chip Size Package).

The BGA (Ball Grid Array) and the CSP (Chip Size Package) have itsbottom surface part provided with a grid-like array of solder balls. Bydisposing the solder balls in a grid-like manner, the pitch of thesolder balls can be arranged with a narrower pitch. This enables highdensification and size-reduction of the semiconductor device.Furthermore, since a high reliability is required for the semiconductordevice, a reliability inspection is performed on the semiconductordevice before shipment. In the reliability test, the semiconductordevice is tested by actually supplying a test signal to thesemiconductor device. Accordingly, contact probes connected to a testeris connected to the solder balls of the semiconductor device.

FIG. 1 is a drawing showing a contact probe according to a conventionaltechnology. A contact probe 10, being generally referred to as a pogopin, is illustrated in FIG. 1. The contact probe 10 mainly includes ashaft-part 11, an upper part plunger 12 for connecting to the solderballs of the BGA, a lower part plunger 13 for connecting to aninspection apparatus (tester), and coil springs 14.

The coil springs 14 are disposed between the upper and lower plungers12, 13. The coil springs 14 allow the upper part plunger 12 to bedisplaceable in a vertical direction (arrow direction in FIG. 1) withrespect to the lower part plunger 13. Furthermore, a housing 15 isformed with a through-hole for disposing the contact probe 10 therein(See, for example, Japanese Laid-Open Patent Application No.2001-255340).

FIG. 2 is a drawing showing a wire-shaped contact probe according to aconventional technology. In FIG. 2, A contact probe 20 includes a softcore 21 and a hard shell 22 disposed in a manner encasing the soft core21. The soft core 21 is formed with a wire bonding technique. The hardshell 22 is formed with a plating method (See, for example, JapaneseLaid-Open Patent Application No. 11-126800).

However, since the contact probe 10 employs mechanical components suchas the coil springs, the contact probe 10 has a difficulty in disposingthe contact probe 10 in a narrow pitch. Furthermore, since the contactprobe 10 is hand-manufactured, the contact probe 10 has poor processprecision, requires large manufacture cost, and is unable to bemass-produced. In addition, the contact probe 10 requiring a largenumber of components further increases the manufacture cost.

With the contact probe 20 formed by the wire-bonding technique, it isdifficult to disposed the contact probe 20 in a narrow pitch since thecontact probe 20 is formed with a complicated shape. Furthermore, owingto the wire shape of the contact probe 20, the contact probe 20 isliable to be subject to problems as permanent set in fatigue and/orplastic deformation.

SUMMARY OF THE INVENTION

It is a general object of the present invention to provide asemiconductor inspection device and a method for manufacturing a contactprobe that substantially obviates one or more of the problems caused bythe limitations and disadvantages of the related art.

Features and advantages of the present invention will be set forth inthe description which follows, and in part will become apparent from thedescription and the accompanying drawings, or may be learned by practiceof the invention according to the teachings provided in the description.Objects as well as other features and advantages of the presentinvention will be realized and attained by a semiconductor inspectiondevice and a method for manufacturing a contact probe particularlypointed out in the specification in such full, clear, concise, and exactterms as to enable a person having ordinary skill in the art to practicethe invention.

To achieve these and other advantages and in accordance with the purposeof the invention, as embodied and broadly described herein, theinvention provides a semiconductor inspection device for inspecting anelectronic device, the semiconductor inspection device including: acontact probe including a plurality of column parts disposed incontinuation, each of the column parts having different height; aconductive layer formed at least on the surfaces of the column parts; aholding part for holding the contact probe; and a through-hole electrodepenetrating at least one of the column parts; wherein the contact probeand the holding part are integrally formed from a single siliconsubstrate.

In the semiconductor inspection device according to an embodiment of thepresent invention, the column parts may be disposed on the siliconsubstrate in a spiral-like manner when observed from a plan viewdirection.

In the semiconductor inspection device according to an embodiment of thepresent invention, the holding part may include a frame bodyencompassing the column parts, wherein the frame body is integrallyformed with at least one of the column parts of the contact probe,wherein the column parts each have a bottom face part that shares a sameplane with respect to a bottom face part of the frame body.

Furthermore, the present invention provides a method of manufacturing acontact probe including N column parts disposed in continuation, each ofthe column parts having different height, the N column parts beingsupported by a holding part, the method including the steps of: a)forming an N-1^(th) resist film on a portion of the silicon substratecorresponding to a position of the holding part and a portion of thesilicon substrate corresponding to a position of an N-1^(th) columnpart; b) forming an N^(th) resist film on the N-1^(th) resist film and aportion of the silicon substrate corresponding to a position of anN^(th) column part, the N^(th) resist film having a property differentfrom that of the N-1^(th) resist film; c) repeating the steps a) and b);d) etching a predetermined area to a predetermined depth by using theN^(th) resist film as a mask and then removing the N^(th) resist film;e) repeating the step d); and f) forming a conductive layer at least onthe surfaces of the first to N^(th) column parts.

Furthermore, the present invention provides a method of manufacturing acontact probe including first to fourth column parts disposed incontinuation, each of the column parts having different height, thefirst to fourth column parts being supported by a holding part, themethod including the steps of: a) forming a first resist film on aportion of a silicon substrate corresponding to the holding part and aportion of the silicon substrate corresponding to a position of thefirst column part; b) forming a second resist film on the first resistfilm and a portion of the silicon substrate corresponding to a positionof the second column part, the second resist film having a propertydifferent from that of the first resist film; c) forming a third resistfilm on the second resist film and a portion of the silicon substratecorresponding to a position of the third column part, the third resistfilm having a property different from that of the second resist film; d)forming a fourth resist film on the third resist film and a portion ofthe silicon substrate corresponding to a position of the fourth columnpart, the fourth resist film having a property different from that ofthe third resist film; e) etching a first area to a first depth by usingthe fourth resist film as a mask and then removing the fourth resistfilm; f) etching a second area to a second depth by using the thirdresist film as a mask and then removing the third resist film; g)etching a third area to a third depth by using the second resist film asa mask and then removing the second resist film; h) etching a fourtharea to a fourth depth by using the first resist film as a mask; and i)forming a conductive layer at least on the surfaces of the first tofourth column parts and filling a through-hole formed by the etching inthe step h) with a conductive material.

In the method according to an embodiment of the present invention, theholding part may include a frame body encompassing the first to fourthcolumn parts, wherein the frame body may be integrally formed with atleast one of the first to fourth column parts of the contact probe.

Other objects and further features of the present invention will beapparent from the following detailed description when read inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a drawing showing a conventional contact probe;

FIG. 2 is a drawing showing a conventional wire-shape contact probe;

FIG. 3 is a plan view of a semiconductor inspection device including acontact probe according to a first embodiment of the present invention;

FIG. 4 is a perspective view of a contact probe shown in FIG. 3;

FIG. 5 is a cross-sectional view of a semiconductor inspection apparatusshown in FIG. 3 along line A-A of FIG. 3;

FIG. 6 is a plan view (part 1) showing a process of a manufacture methodof a semiconductor inspection device according to a first embodiment ofthe present invention;

FIG. 7 is a cross-sectional view of a configuration shown in FIG. 6along line C-C of FIG. 6;

FIG. 8 is a plan view (part 2) showing a process of a manufacture methodof a semiconductor inspection device according to a first embodiment ofthe present invention;

FIG. 9 is a cross-sectional view of a configuration shown in FIG. 8along line C-C of FIG. 8;

FIG. 10 is a plan view (part 3) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 11 is a cross-sectional view of a configuration shown in FIG. 10along line C-C of FIG. 10;

FIG. 12 is a cross-sectional view of a configuration shown in FIG. 10along line D-D of FIG. 10;

FIG. 13 is a plan view (part 4) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 14 is a cross-sectional view of a configuration shown in FIG. 13along line C-C of FIG. 13;

FIG. 15 is a cross-sectional view of a configuration shown in FIG. 13along line E-E of FIG. 13;

FIG. 16 is a plan view (part 5) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 17 is a cross-sectional view of a configuration shown in FIG. 16along line C-C of FIG. 16;

FIG. 18 is a cross-sectional view of a configuration shown in FIG. 16along line E-E of FIG. 16;

FIG. 19 is a plan view (part 6) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 20 is a cross-sectional view of a configuration shown in FIG. 19along line C-C of FIG. 19;

FIG. 21 is a cross-sectional view of a configuration shown in FIG. 19along line E-E of FIG. 19;

FIG. 22 is a plan view (part 7) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 23 is a cross-sectional view of a configuration shown in FIG. 22along line C-C of FIG. 22;

FIG. 24 is a cross-sectional view of a configuration shown in FIG. 22along line E-E of FIG. 22;

FIG. 25 is a plan view (part 8) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 26 is a cross-sectional view of a configuration shown in FIG. 25along line C-C of FIG. 25;

FIG. 27 is a cross-sectional view of a configuration shown in FIG. 25along line E-E of FIG. 25;

FIG. 28 is a plan view (part 9) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 29 is a cross-sectional view of a configuration shown in FIG. 28along line A-A of FIG. 28;

FIG. 30 is a cross-sectional view (part 1) showing a process of themanufacture method of the semiconductor inspection device according to afirst embodiment of the present invention;

FIG. 31 is a plan view (part 10) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 32 is a perspective view of first-fourth column parts formed in anarea G shown in FIG. 31;

FIG. 33 is a cross-sectional view of a configuration shown in FIG. 31along line A-A of FIG. 31;

FIG. 34 is a plan view (part 11) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 35 is a cross-sectional view of a configuration shown in FIG. 34along line A-A of FIG. 34;

FIG. 36 is a cross-sectional view showing a process of the manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 37 is a plan view (part 12) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 38 is a cross-sectional view of a configuration shown in FIG. 37along line A-A of FIG. 37;

FIG. 39 is a plan view (part 12) showing a process of a manufacturemethod of a semiconductor inspection device according to a firstembodiment of the present invention;

FIG. 40 is a cross-sectional view of a configuration shown in FIG. 39along line A-A of FIG. 39;

FIG. 41 is a plan view showing a semiconductor inspection deviceaccording to a second embodiment of the present invention;

FIG. 42 is a cross-sectional view of a configuration shown in FIG. 41along line C-C of FIG. 41;

FIG. 43 is a cross-sectional view of a configuration shown in FIG. 41along line E-E of FIG. 41;

FIG. 44 is a plan view showing a semiconductor inspection deviceaccording to a third embodiment of the present invention;

FIG. 45 is a perspective view of a contact probe shown in FIG. 44;

FIG. 46 is a cross-sectional view of a semiconductor inspection devicealong line I-I of FIG. 44;

FIG. 47 is a plan view (part 1) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 48 is a cross-sectional view of a configuration shown in FIG. 47along line I-I of FIG. 47;

FIG. 49 is a plan view (part 2) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 50 is a cross-sectional view of a configuration shown in FIG. 49along line I-I of FIG. 49;

FIG. 51 is a cross-sectional view of a configuration shown in FIG. 49along line J-J of FIG. 49;

FIG. 52 is a plan view (part 3) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 53 is a cross-sectional view of a configuration shown in FIG. 52along line I-I of FIG. 52;

FIG. 54 is a cross-sectional view of a configuration shown in FIG. 52along line J-J of FIG. 52;

FIG. 55 is a plan view (part 4) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 56 is a cross-sectional view of a configuration shown in FIG. 55along line I-I of FIG. 55;

FIG. 57 is a cross-sectional view of a configuration shown in FIG. 55along line J-J of FIG. 55;

FIG. 58 is a plan view (part 5) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 59 is a cross-sectional view of a configuration shown in FIG. 58along line I-I of FIG. 58;

FIG. 60 is a cross-sectional view of a configuration shown in FIG. 58along line J-J of FIG. 58;

FIG. 61 is a plan view (part 6) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 62 is a cross-sectional view of a configuration shown in FIG. 61along line I-I of FIG. 61;

FIG. 63 is a cross-sectional view of a configuration shown in FIG. 61along line J-J of FIG. 61;

FIG. 64 is a plan view (part 7) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 65 is a cross-sectional view of a configuration shown in FIG. 64along line I-I of FIG. 64;

FIG. 66 is a cross-sectional view of a configuration shown in FIG. 64along line J-J of FIG. 64;

FIG. 67 is a plan view (part 8) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 68 is a cross-sectional view of a configuration shown in FIG. 67along line I-I of FIG. 67;

FIG. 69 is a cross-sectional view of a configuration shown in FIG. 67along line J-J of FIG. 67;

FIG. 70 is a plan view (part 9) showing a process of the manufacturemethod of a semiconductor inspection device according to a thirdembodiment of the present invention;

FIG. 71 is a cross-sectional view of a configuration shown in FIG. 70along line I-I of FIG. 70; and

FIG. 72 is a cross-sectional view of a configuration shown in FIG. 70along line J-J of FIG. 70.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, embodiments of the present invention will be describedwith reference to the accompanying drawings.

First Embodiment

First, a semiconductor inspection device including a contact probeaccording to a first embodiment of the present invention is describedwith reference to FIG. 3 to FIG. 5. FIG. 3 is a plan view showing thesemiconductor inspection device according to the first embodiment of thepresent invention, FIG. 4 is a perspective view of a contact probe shownin FIG. 3, and FIG. 5 is a cross-sectional view of the semiconductorinspection device along line A-A of FIG. 3. It is to be noted that thearrow direction Z-Z in FIG. 4 indicates a vertical direction. Numeral60B shown in FIG. 5 indicates a back face of a contact probe 45 and aholding part 41 (hereinafter referred to as “rear face 60B”).

A semiconductor inspection device 40 mainly includes the holding part41, the contact probe 45, and a measuring part 58 (see FIG. 5). Thecontact probe 45 and the holding part 41 are integrally formed. Theholding part 41 is formed as a frame body in a manner encompassing thecontact probe 45, a through part 83 is formed between the contact probe45 and the holding part 41. It is to be noted that, although not shownin the drawing, plural contact probes 45 are disposed in grid-likemanner in the semiconductor inspection device 40.

The contact probe 45 mainly includes plural column parts (first columnpart 46 to fourth column part 49), a conductive layer (conductive metallayer) 52, and a through-hole electrode 55. The first-fourth columnparts 46-49, having different height, are disposed in continuation, inwhich the first column part 46 is the most highest column part, thesecond column part 47 is the second highest column part, the thirdcolumn part 48 is the third highest column part, and the fourth columnpart 49 is the fourth highest column part. Furthermore, the first-fourthcolumn parts 46-49 each have a bottom face part (rear face 60B) whichshares a same plane.

In a plan view of the first-fourth column parts 46-49 (See FIG. 3), thefirst-fourth column parts 46-49 are arranged forming a spiral-likeshape. The contact probe 45 is supported in a cantilever manner by theholding part 41 via the fourth column part 49.

Thus structured, the contact probe 45 is able to attain a spring-likeproperty with respect to the frame body-shaped holding part 41.Accordingly, when the contact probe 45 is contacted to a terminal part57 of an electronic device 56, plastic deformation of the contact probe45 can be reduced, thereby extending the lifetime of the contact probe45. Furthermore, since the first-fourth column parts 46-49 support eachother by arranging the first-fourth column parts 46-49 in thespiral-like manner, the strength of the contact probe 45 can beincreased.

The conductive layer 52 is formed at least on the surfaces of thefirst-fourth column parts 46-49. The fourth column part 49, which islowest in height, includes the through-hole electrode 55 being formed ina through-hole penetrating the fourth column part 49 in direction Z-Z.The through-hole electrode 55 is formed simultaneously with the formingof the conductive layer 52. The through-hole electrode 55 serves toelectrically connect the rear face 60B and the conductive layer 52. Themeasuring part 58 is electrically connected to the through-holeelectrode 55. The measuring part 58 is used in inspecting an electronicdevice 56 based on input-output signals from the electronic device 56.As for the electronic device 56 being the target for inspection, othersemiconductor elements may be employed as alternatives of the CSP or theBGA.

The inspection of the electronic device 56, using the semiconductorinspection device 40, is performed by abutting the terminal part 57 ofthe electronic device 56 to the conductive layer 56 formed at an upperface part of the first column part 46 and electrically connecting themeasuring part 58 and the electronic device 56 via the through-holeelectrode 55.

Thus structured, the contact probe 45 and the holding part 41 isintegrally formed with a single silicon substrate. As for the method forintegral formation, a high precision processing technology used inprocessing semiconductor devices is employed (described in detailbelow). Accordingly, process precision can be improved, thereby enablingthe contact probes 45 to be disposed in a narrower pitch compared to theconventional contact probe. In addition, the contact probes 45 can bemass produced at low cost. Furthermore, since a silicon substrate isemployed as the material of the contact probe 45, plastic deformation ofthe contact probe 45 can be prevented more effectively compared to theconventional contact probe.

Next, a method of manufacturing the semiconductor inspection device 40including the contact probe 45 according to the first embodiment of thepresent invention is described with reference to FIGS. 6-40. FIG. 6 is aplan view (part 1) showing a process of the manufacture method of thesemiconductor inspection device according to the first embodiment of thepresent invention. FIG. 7 is a cross-sectional view of the configurationshown in FIG. 6 along line C-C of FIG. 6.

As shown in FIGS. 6 and 7, a first resist film 62 is formed on an area63 of the silicon substrate 60 corresponding to the holding part 41 andon an area 61 of the silicon substrate 60 corresponding to the firstcolumn part 46. As a preferable example of the first resist film 62, aliquid resist containing, for example, a phenolic resin as a maincomponent, a melamine and/or epoxy resin as a sub-component, and aphotosensitive agent may be employed, in which the resist is coated andis then heated.

FIG. 8 is a plan view (part 2) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 9 is a cross-sectional view ofthe configuration shown in FIG. 8 along line C-C of FIG. 6.

Next, as shown in FIGS. 8 and 9, a second resist film 65, having aproperty different from that of the first resist film 62, is formed onan area 64 of the silicon substrate 60 corresponding to the secondcolumn part 47 and on the first resist film 62. As a preferable exampleof the second resist film 65, a liquid resist containing, for example, anovolac resin and/or naphthoquinone diazide dielectric as a maincomponent may be employed.

FIG. 10 is a plan view (part 3) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 11 is a cross-sectional viewof the configuration shown in FIG. 10 along line C-C of FIG. 10. FIG. 12is a cross-sectional view of the configuration shown in FIG. 10 alongline D-D of FIG. 10.

Next, as shown in FIGS. 10 to 12, a third resist film 67, having aproperty different from that of the second resist film 65, is formed onan area 66 of the silicon substrate 60 corresponding to the third columnpart 48 and on the second resist film 65. As a preferable example of thethird resist film 67, a liquid resist containing, for example, aphenolic resin as a main component, a melamine and/or epoxy resin as asub-component, and a photosensitive agent may be employed, in which theresist is coated and is then heated.

FIG. 13 is a plan view (part 4) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 14 is a cross-sectional viewof the configuration shown in FIG. 13 along line C-C of FIG. 6. FIG. 15is a cross-sectional view of the configuration shown in FIG. 13 alongline E-E of FIG. 13.

Next, as shown in FIGS. 13 to 15, a fourth resist film 71, having aproperty different from that of the third resist film 67, is formed onan area 72 of the silicon substrate 60 corresponding to the fourthcolumn part 49 and on the third resist film 67. Here, the fourth resistlayer 71 at the area 62 corresponding to the fourth column part 49 andthe fourth resist layer 71 situated at the area 63 corresponding to theholding part 41 are integrally formed in a continuing manner. Thereby,the fourth column part 49 can be supported by the holding part 49 duringa first etching process using the fourth resist layer 71 as a mask. As apreferable example of the fourth resist film 71, a liquid resistcontaining, for example, a novolac resin and/or naphthoquinone diazidedielectric as a main component may be employed.

FIG. 16 is a plan view (part 5) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 17 is a cross-sectional viewof the configuration shown in FIG. 16 along line C-C of FIG. 16. FIG. 18is a cross-sectional view of the configuration shown in FIG. 16 alongline E-E of FIG. 16. It is to be noted that H1 in FIGS. 17 and 18indicates the depth of a groove part 73 formed by a first etchingprocess (hereinafter referred to depth H1).

Next, as shown in FIGS. 16 to 18, the first etching process using thefourth resist layer 71 as a mask is performed on the silicon substrate60 to form the groove part 73 having a depth H1 with respect to surface60A of the silicon substrate 60. Then, the fourth resist film 71 isremoved.

FIG. 19 is a plan view (part 6) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 20 is a cross-sectional viewof the configuration shown in FIG. 19 along line C-C of FIG. 19. FIG. 21is a cross-sectional view of the configuration shown in FIG. 19 alongline E-E of FIG. 19. It is to be noted that H2 in FIGS. 20 and 21indicates an etching depth formed by a second etching process(hereinafter referred to depth H2).

Next, as shown in FIGS. 19 to 21, the second etching process using thethird resist layer 67 as a mask is performed on the silicon substrate 60to form a groove part 75 having a depth (H1+H2) with respect to surface60A of the silicon substrate 60, and a step part 76 of area 72corresponding to the fourth column part 49. The step part 75 is formedas a step having a depth H2 with respect to surface 60A of the siliconsubstrate 60. Then, the third resist film 67 is removed.

FIG. 22 is a plan view (part 7) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 23 is a cross-sectional viewof the configuration shown in FIG. 22 along line C-C of FIG. 22. FIG. 24is a cross-sectional view of the configuration shown in FIG. 22 alongline E-E of FIG. 22. It is to be noted that H3 in FIGS. 23 and 24indicates an etching amount of a third etching process (etching depth,hereinafter referred to as “depth H3”).

Next, as shown in FIGS. 22 to 24, the third etching process using thesecond resist layer 65 as a mask is performed on the silicon substrate60 to form a groove part 77 having a depth (H1+H2+H3) with respect tosurface 60A of the silicon substrate 60, a step part 79 having a depth(H2+H3) in the area 72 corresponding to the fourth column part 49, and astep part 81 having a depth H3 in the area 66 corresponding to the thirdcolumn part 48. Then, the second resist film 65 is removed.

FIG. 25 is a plan view (part 8) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 26 is a cross-sectional viewof the configuration shown in FIG. 25 along line C-C of FIG. 25. FIG. 27is a cross-sectional view of the configuration shown in FIG. 25 alongline E-E of FIG. 25. It is to be noted that H4 in FIGS. 26 and 27indicates an etching amount of a fourth etching process (etching depth,hereinafter referred to as “depth H4”).

Next, as shown in FIGS. 25 to 27, the fourth etching process using thefirst resist layer 62 as a mask is performed on the silicon substrate 60to form the through part 83, the holding part 41, the fourth column part49 including a step having a depth (H2+H3+H4) with respect to an upperface 41A of the holding part (silicon holding part) 41 in the area 72,the third column part 48 including a step having a depth (H3+H4) in thearea 66, the second column part 47 including a step having a depth (H4)in the area 64, and the first column part 46. An upper face 46A of thefirst column part 46 is disposed sharing a common plane with the upperface 41A of the holding part 41.

It is to be noted that the depths H1-H4 may be formed satisfying arelation of H1=H2=H3=H4, or may be formed having different depths,respectively. Furthermore, in a case where the depths H1-H4 satisfy therelation of H1=H2=H3=H4, H1 may be set to, for example, 50 μm.Furthermore, the widths of the first-fourth column parts 46-49 may beformed, for example, in sizes ranging approximately between 15-50 μm.

FIG. 28 is a plan view (part 9) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 29 is a cross-sectional viewof the configuration shown in FIG. 28 along line A-A of FIG. 28. FIG. 30is a cross-sectional view (part 1) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention.

Next, as shown in FIGS. 28 and 29, after the first resist film 62 isremoved, a resist film 91 having an opening part 92 for forming athrough-hole 94 is formed so that the through-hole electrode 55 can beformed in the fourth column part 49. Then, as shown in FIG. 30, anetching process using the resist film 91 as a mask is performed to formthe through-hole 94.

FIG. 31 is a plan view (part 10) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 32 is a perspective view ofthe first-fourth column parts 46-49 formed in an area G shown in FIG.31. FIG. 33 is a cross-sectional view of the configuration shown in FIG.31 along line A-A of FIG. 31. Next, as shown in FIGS. 31 to 33, theresist film 91 is removed.

FIG. 34 is a plan view (part 11) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 35 is a cross-sectional viewof the configuration shown in FIG. 34 along line A-A of FIG. 34. Next,as shown in FIGS. 34 and 35, a seed layer 95 used when forming a platingfilm on the configuration shown in FIG. 33 and inside the through-hole94. The seed layer 95 may be formed with, for example, a sputter methodor a CVD method. For example, a Ti film, a W film, or a Cr film may beemployed for the seed layer 95.

FIG. 36 is a cross-sectional view is a cross-sectional view (part 2)showing a process of the manufacture method of the semiconductorinspection device according to the first embodiment of the presentinvention. Next, as shown in FIG. 36, the seed layer 96 is adhered tothe rear face 60B of the contact probe 45 and the holding part 41. Forexample, a conductive tape having CU as a base material may be employedas the seed layer 96.

FIG. 37 is a plan view (part 12) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 38 is a cross-sectional viewof the configuration shown in FIG. 37 along line A-A of FIG. 37. Asshown in FIGS. 37 and 38, electricity is supplied from the seed layer 95adhered to the rear face 60B of the contact probe 45 and the holdingpart 41, and then a plating process is performed to form a plating film98 at the upper and side faces of the first-fourth column parts 46-49.Accordingly, the through-hole electrode 55 including the seed layer 95and the plating film 98 is formed inside the through-hole 94, and theconductive layer 52 including the seed layer 95 and the plating film 98is formed on the contact probe 45 and the holding part 41. For example,a film including a Ni alloy, Cu, and/or gold may be employed as theplating film 98.

FIG. 39 is a plan view (part 13) showing a process of the manufacturemethod of the semiconductor inspection device according to the firstembodiment of the present invention. FIG. 40 is a cross-sectional viewof the configuration shown in FIG. 39 along line A-A of FIG. 39. Next,as shown in FIGS. 39 and 40, the seed layers 95 and 95 and the platingfilm 98 (conductive layer 52) except for those formed on the surface ofthe contact probe 45 and the through-hole electrode 55 are removed,thereby completing the manufacturing of the semiconductor inspectiondevice 40 including the contact probe 45 according to the firstembodiment of the present invention.

Hence, in manufacturing the semiconductor inspection device 40 with theabove-described manufacturing processes, process precision can beimproved by employing such photo-etching technique used for processingsemiconductor devices or the like, to thereby enable the contactprobe(s) 45 to be arranged in a narrower pitch than the conventionalcontact probe(s). In addition, the contact probe 45 having littleplastic deformation can be mass-produced at low cost. It is to be notedthat a film of conductive polymer, such as polypyrrole or polyacetylene,may be employed as an alternative for the conductive metal material ofthe conductive layer 52. The through-hole electrode 55 may be formedwith the conductive polymer. Furthermore, in a case of employingpolypyrrole as the material of the conductive layer 52, a polypyrrolefilm can be formed by coating with a polypyrrole solution.

Second Embodiment

Next, a method of manufacturing a semiconductor inspection deviceincluding a contact probe according to a second embodiment of thepresent invention is described with reference to FIG. 41 to FIG. 43.FIG. 41 is a plan view showing the semiconductor inspection deviceaccording to the second embodiment of the present invention, FIG. 42 isa cross-sectional view of the configuration shown in FIG. 41 along lineC-C of FIG. 41. FIG. 43 is a cross-sectional view of the configurationshown in FIG. 41 along line E-E of FIG. 41. It is to be noted that themethod of manufacturing the semiconductor inspection device includingthe contact probe according to the second embodiment of the presentinvention is a modified example of the method of manufacturing thesemiconductor inspection device 40 including the contact probe 45according to the first embodiment of the present invention. Therefore,in FIGS. 41 to 43, like components are denoted by like numerals as ofFIGS. 25 to 27.

In the second embodiment of the present invention, by performing thefourth etching process, a plate member 87 having a thickness H5 and theholding part 41 are formed in addition to the formation of thefirst-fourth column parts 46-49. Furthermore, a groove part 85 is formedbetween the first-fourth column parts 46-49 and the holding part 41.After the fourth etching process, the plate member 87 is removed bypolishing or etching. After the plate member 87 is removed, theconductive layer 52 and the through-hole electrode 55 are formed byexecuting the above-described processes illustrated with FIGS. 28-40,thereby completing the manufacturing of the semiconductor inspectiondevice 40.

By allowing the plate member 87, which supports the bottom face of thefirst-fourth column parts 46-49 and the bottom face of the holding part41, to remain after the fourth etching process, the strength of thesemiconductor inspection device 40 can be maintained when thesemiconductor inspection device 40 is transported to or from processingapparatuses, such as a photolithography apparatus or an etchingapparatus, during the manufacture processes.

Third Embodiment

Next, a semiconductor inspection device including a contact probeaccording to a third embodiment of the present invention is describedwith reference to FIG. 44 to FIG. 46. FIG. 44 is a plan view showing thesemiconductor inspection device according to the third embodiment of thepresent invention, FIG. 45 is a perspective view of a contact probeshown in FIG. 44, and FIG. 46 is a cross-sectional view of thesemiconductor inspection device along line I-I of FIG. 44. It is to benoted that the arrow direction Z-Z in FIG. 45 indicates a verticaldirection.

A semiconductor inspection device 100 mainly includes a holding part101, a contact probe 105, and a measuring part 58 (see FIG. 46). Thecontact probe 105 and the holding part 101 are integrally formed. Theholding part 101 is formed as a frame body in a manner encompassing thecontact probe 105. The holding part 101 is integrally formed with afirst column part 106 included in the contact probe 105. Furthermore, athrough part 102 is formed between the contact probe 105 and the holdingpart 101. This allows the contact probe 105 to be supported by theholding part 101 in a flexible state.

Thus structured, the contact probe 105 is able to attain a spring-likeproperty with respect to the holding part 101. Accordingly, when thecontact probe 105 is contacted to the terminal part 57 of the electronicdevice 56, plastic deformation of the contact probe 105 can be reduced,thereby extending the lifetime of the contact probe 105.

The contact probe 105 includes plural column parts (first column part106 to fourth column part 109), a conductive layer (conductive metallayer) 114, and a through-hole electrode 111. The first-fourth columnparts 106-109, having different height, are disposed in continuation, inwhich the first column part 106 is the most highest column part, thesecond column part 107 is the second highest column part, the thirdcolumn part 108 is the third highest column part, and the fourth columnpart 109 is the fourth highest column part. In a plan view of thefirst-fourth column parts 106-109 (See FIG. 44), the first-fourth columnparts 106-109 are arranged forming a spiral-like shape. Furthermore, thefirst-fourth column parts 106-109 each have bottom face parts 106A-109Awhich share a same plane.

The bottom face parts 106A-109A of the first-fourth column parts 106-109are respectively formed with the conductive metal layer 114 forelectrically connecting with the terminal part 57 of the electronicdevice 56. By disposing the bottom face parts 106A-109A of thefirst-fourth column parts 106-109 on a same plane, a large area can beobtained for electrically connecting with the terminal part 57 of theelectronic device 56. Accordingly, the contact probe 105 and theelectronic device 56 can be electrically connected with satisfactoryprecision.

The first column part 106 includes the through-hole electrode 111 beingformed in a through-hole penetrating the first column part 106 indirection Z-Z. The through-hole electrode 111 serves to electricallyconnect a surface part of the first column part 106 and the conductivelayer 114. The through-hole electrode 111 is formed simultaneously withthe forming of the conductive layer 114. The measuring part 58 iselectrically connected to the through-hole electrode 111. The measuringpart 58 is used in inspecting the electronic device 56 based oninput-output signals from the electronic device 56.

The inspection of the electronic device 56 is performed by abutting theterminal part 57 of the electronic device 56 to a face of the fourthcolumn part at which the conductive layer 114 is formed and electricallyconnecting the measuring part 58 and the electronic device 56 via thethrough-hole electrode 111.

Accordingly, the contact probe(s) 105 can be disposed in a narrow pitchand be mass produced at low cost.

Next, a method of manufacturing the semiconductor inspection device 100including the contact probe 105 according to the third embodiment of thepresent invention is described with reference to FIGS. 47-72. FIG. 47 isa plan view (part 1) showing a process of the manufacture method of thesemiconductor inspection device according to the third embodiment of thepresent invention. FIG. 48 is a cross-sectional view of theconfiguration shown in FIG. 47 along line I-I of FIG. 47.

As shown in FIGS. 47 and 48, a first resist film 123 is formed on anarea 121 of the silicon substrate 120 corresponding to the holding part101 and on an area 122 of the silicon substrate 120 corresponding to thefirst column part 106. Here, a opening part 124 is formed in the firstresist film 123 disposed in the area 122 corresponding to the firstcolumn part 106. The opening part 124 is provided for forming athrough-hole afterwards in the first column part 106. It is to be notedthat, as a preferable example of the first resist film 123, a liquidresist containing, for example, a phenolic resin as a main component, amelamine and/or epoxy resin as a sub-component, and a photosensitiveagent may be employed, in which the resist is coated and is then heated.

FIG. 49 is a plan view (part 2) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 50 is a cross-sectional viewof the configuration shown in FIG. 49 along line I-I of FIG. 49. FIG. 51is a cross-sectional view of the configuration shown in FIG. 49 alongline J-J of FIG. 49.

Next, as shown in FIGS. 49 to 51, a second resist film 107, having aproperty different from that of the first resist film 123 and thushaving an opening part 128 formed thereto, is formed on an area 126 ofthe silicon substrate 120 corresponding to the second column part 107and on the first resist film 123. As a preferable example of the secondresist film 127, a liquid resist containing, for example, a novolacresin and/or naphthoquinone diazide dielectric as a main component maybe employed.

FIG. 52 is a plan view (part 3) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 53 is a cross-sectional viewof the configuration shown in FIG. 52 along line I-I of FIG. 52. FIG. 54is a cross-sectional view of the configuration shown in FIG. 52 alongline J-J of FIG. 52.

Next, as shown in FIGS. 52 to 54, a third resist film 108, having aproperty different from that of the second resist film 127, is formed onan area 131 of the silicon substrate 120 corresponding to the thirdcolumn part 108 and on the second resist film 127. The third resist film132 is formed with an opening part 133 which exposes the opening part128. As a preferable example of the third resist film 132, a liquidresist containing, for example, a phenolic resin as a main component, amelamine and/or epoxy resin as a sub-component, and a photosensitiveagent may be employed, in which the resist is coated and is then heated.

FIG. 55 is a plan view (part 4) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 56 is a cross-sectional viewof the configuration shown in FIG. 55 along line I-I of FIG. 55. FIG. 57is a cross-sectional view of the configuration shown in FIG. 55 alongline J-J of FIG. 55.

Next, as shown in FIGS. 55 to 57, a fourth resist film 109, having aproperty different from that of the third resist film 132, is formed onan area 136 of the silicon substrate 120 corresponding to the fourthcolumn part 109 and on the third resist film 132. The fourth resist film137 is formed with an opening part 138 which exposes the opening part133. As a preferable example of the fourth resist film 137, a liquidresist containing, for example, a novolac resin and/or naphthoquinonediazide dielectric as a main component may be employed.

FIG. 58 is a plan view (part 5) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 59 is a cross-sectional viewof the configuration shown in FIG. 58 along line I-I of FIG. 58. FIG. 60is a cross-sectional view of the configuration shown in FIG. 58 alongline J-J of FIG. 58. It is to be noted that L1 in FIGS. 58 to 60indicates the depth of a groove part 141 formed by a first etchingprocess (etching depth, hereinafter referred to as depth L1).

Next, as shown in FIGS. 58 to 60, the first etching process using thefourth resist layer 137 as a mask is performed on the silicon substrate120 to form the groove part 141 having a depth L1 with respect to thesurface of the silicon substrate 120. Then, the fourth resist film 137is removed.

FIG. 61 is a plan view (part 6) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 62 is a cross-sectional viewof the configuration shown in FIG. 61 along line I-I of FIG. 61. FIG. 63is a cross-sectional view of the configuration shown in FIG. 61 alongline J-J of FIG. 61. It is to be noted that L2 in FIGS. 61 to 63indicates an etching amount depth formed by a second etching process(etching depth, hereinafter referred to as depth L2).

Next, as shown in FIGS. 64 to 66, the second etching process using thethird resist layer 132 as a mask is performed on the silicon substrate120 to form a groove part 146 having a depth (L1+L2) with respect to thesurface of the silicon substrate 120, and a step part 142 of area 136corresponding to the fourth column part 109. The step part 142 is formedas a step having a depth L2 with respect to the surface of the siliconsubstrate 120. Then, the third resist film 132 is removed.

FIG. 64 is a plan view (part 7) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 65 is a cross-sectional viewof the configuration shown in FIG. 64 along line I-I of FIG. 64. FIG. 66is a cross-sectional view of the configuration shown in FIG. 64 alongline J-J of FIG. 64. It is to be noted that L3 in FIGS. 64 to 66indicates an etching amount of a third etching process (etching depth,hereinafter referred to as “depth L3”).

Next, as shown in FIGS. 67 to 69, the third etching process using thesecond resist layer 127 as a mask is performed on the silicon substrate120 to form a groove part 152 having a depth (L1+L2+L3) with respect tothe surface of the silicon substrate 120, a step part 148 having a depth(L2+L3) in the area 136 corresponding to the fourth column part 109, anda step part 149 having a depth L3 in the area 131 corresponding to thethird column part 108. Then, the second resist film 127 is removed.

FIG. 67 is a plan view (part 8) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 68 is a cross-sectional viewof the configuration shown in FIG. 67 along line I-I of FIG. 67. FIG. 69is a cross-sectional view of the configuration shown in FIG. 67 alongline J-J of FIG. 67. It is to be noted that L4 in FIGS. 67 to 69indicates an etching amount of a fourth etching process (etching depth,hereinafter referred to as “depth L4”).

Next, as shown in FIGS. 67 to 69, the fourth etching process using thefirst resist layer 123 as a mask is performed on the silicon substrate120 to form the through part 102, the holding part 101, the fourthcolumn part 109 including a step having a depth (L2+L3+L4) with respectto an upper face of the holding part 101 in the area 136, the thirdcolumn part 108 including a step having a depth (L3+L4) with respect tothe upper face of the holding part 101 in the area 131, the secondcolumn part 107 including a step having a depth (L4) with respect to theupper face of the holding part 101 in the area 126, and the first columnpart 106 having an upper face that shares a same plane with respect tothe upper surface of the holding part 101. Furthermore, the first columnpart 106 is provided with a through-hole 125 for forming thethrough-hole electrode 111.

Accordingly, the step having the depth L4 is formed between the firstcolumn part 106 and the second column part 107, the step having thedepth L3 is formed between the second column part 107 and the thirdcolumn part 108, and the step having the depth L2 is formed between thethird column part 108 and the fourth column part 109. It is to be notedthat the depths L1-L4 may be formed satisfying a relation ofL1=L2=L3=L4, or may be formed having different depths, respectively.Furthermore, in a case where the depths L1-L4 satisfy the relation ofL1=L2=L3=L4, L1 may be set to, for example, 50 μm. Furthermore, thewidths of the first-fourth column parts 106-109 may be formed, forexample, in sizes ranging approximately between 15-50 μm.

FIG. 70 is a plan view (part 9) showing a process of the manufacturemethod of the semiconductor inspection device according to the thirdembodiment of the present invention. FIG. 71 is a cross-sectional viewof the configuration shown in FIG. 70 along line I-I of FIG. 70. FIG. 72is a cross-sectional view of the configuration shown in FIG. 70 alongline J-J of FIG. 70.

Next, as shown in FIGS. 70 to 72, after the first resist film 123 isremoved, the conductive metal layer 114 including a seed layer 126 and ametal plating film 127 is formed on the bottom face parts 106A-109A ofthe first-fourth column parts 106-109, and the through-hole electrode111 including the seed layer 126 and the metal plating film 127 isformed in the through-hole 125. For example, a Ti film, a W film, or aCr film may be employed as the seed layer 126. Furthermore, a filmincluding, for example, a Ni alloy, Cu, and/or gold may be employed asthe plating film 127. It is to be noted that, since the processes forforming the conductive metal layer 114 and the through-hole 111 are thesame as that of the first embodiment, further description thereof isomitted.

Hence, in manufacturing the semiconductor inspection device 100 with theabove-described manufacturing processes, process precision can beimproved by employing such photo-etching technique used for processingsemiconductor devices or the like, to thereby enable the contactprobe(s) 105 to be arranged in a narrower pitch than the conventionalcontact probe(s). In addition, the contact probe 105 having littleplastic deformation can be mass-produced at low cost. It is to be notedthat, in the third embodiment, the fourth column part 109 may beintegrally formed with the holding part 101. Furthermore, the positionof the through-hole electrode (55, 111) is not limited to the positiondescribed in the first-third embodiments, but may be formed at any oneof the plural column parts.

Accordingly, the present invention provides a semiconductor inspectionapparatus including a contact probe and a method for manufacturing thecontact probe for improving process precision, enabling contact probesto be disposed in a narrow pitch, and allowing contact probes to be massproduced at low cost.

Further, the present invention is not limited to these embodiments, butvarious variations and modifications may be made without departing fromthe scope of the present invention.

The present application is based on Japanese priority application No.2004-009614 filed on Jan. 16, 2004, with the Japanese Patent Office, theentire contents of which are hereby incorporated by reference.

1. A method of manufacturing a contact probe including N column partsdisposed in continuation, each of the column parts having differentheight, the N column parts being supported by a holding part, the methodcomprising the steps of: a) forming an N-1^(th) resist film on a portionof the silicon substrate corresponding to a position of the holding partand a portion of the silicon substrate corresponding to a position of anN-1^(th) column part; b) forming an N^(th) resist film on the N-1^(th)resist film and a portion of the silicon substrate corresponding to aposition of an N^(th) column part, the N^(th) resist film having aproperty different from that of the N-1^(th) resist film; c) repeatingthe steps a) and b); d) etching a predetermined area to a predetermineddepth by using the N^(th) resist film as a mask and then removing theN^(th) resist film; e) repeating the step d); and f) forming aconductive layer at least on the surfaces of the first to N^(th) columnparts.
 2. A method of manufacturing a contact probe including first tofourth column parts disposed in continuation, each of the column partshaving different height, the first to fourth column parts beingsupported by a holding part, the method comprising the steps of: a)forming a first resist film on a portion of a silicon substratecorresponding to the holding part and a portion of the silicon substratecorresponding to a position of the first column part; b) forming asecond resist film on the first resist film and a portion of the siliconsubstrate corresponding to a position of the second column part, thesecond resist film having a property different from that of the firstresist film; c) forming a third resist film on the second resist filmand a portion of the silicon substrate corresponding to a position ofthe third column part, the third resist film having a property differentfrom that of the second resist film; d) forming a fourth resist film onthe third resist film and a portion of the silicon substratecorresponding to a position of the fourth column part, the fourth resistfilm having a property different from that of the third resist film; e)etching a first area to a first depth by using the fourth resist film asa mask and then removing the fourth resist film; f) etching a secondarea to a second depth by using the third resist film as a mask and thenremoving the third resist film; g) etching a third area to a third depthby using the second resist film as a mask and then removing the secondresist film; h) etching a fourth area to a fourth depth by using thefirst resist film as a mask; and i) forming a conductive layer at leaston the surfaces of the first to fourth column parts and filling athrough-hole formed by executing step h) with a conductive material. 3.The method as claimed in claim 2, wherein the holding part includes aframe body encompassing the first to fourth column parts, wherein theframe body is integrally formed with at least one of the first to fourthcolumn parts of the contact probe.